Search results for " Semiconductors"
showing 10 items of 96 documents
Electrochemical polymerization of ambipolar carbonyl-functionalized indenofluorene with memristive properties
2019
Abstract Carbonyl-functionalized indenofluorene was electropolymerized with a high faradaic efficiency of 85% and the solid state properties of the resulting polymeric thin films were investigated. They displayed modular optical properties depending on their oxidation state. The approach used for inorganic semiconductors was applied to polyindeonofluorene derivative. Mott-Schottky analysis evidenced a switching from p-type to n-type electrical conduction, suggesting an ambipolar behaviour of the polymer. As an application, flexible organic memristors were fabricated and resistive switching properties were observed.
Solid-state mechanochemical synthesis of multinary metal halide semiconductors for optoelectronics: From powder to thin film
2020
En la última década, las perovskitas de haluro de plomo, así como otros haluros de metales múltiples, incluidas las alternativas sin plomo, han demostrado ser materiales prometedores para su uso en optoelectrónica. Por lo tanto, se buscan activamente nuevas formas de producir semiconductores de alta pureza a gran escala. Por tanto, el objetivo principal de esta tesis doctoral es el desarrollo de perovskitas y semiconductores relacionados utilizando métodos sin disolventes. Además, con la perspectiva del uso de dichos materiales en optoelectrónica a escala industrial, el foco está puesto en trabajar con materiales benignos para el desarrollo de alternativas a las perovskitas tóxicas. La sínt…
Light-induced transmission nonlinearities in gallium selenide
1999
The intensity of a He–Ne laser (633 nm, 5 mW) transmitted by different GaSe samples is observed to change in correlation with a Nd-yttrium–aluminum–garnet laser pulse (532 nm, 7.8 ns, 3 mJ) which excites them. Such time response has been attributed to a nonlinear optical effect, i.e., a decrease in the refractive index due to the exciton screening by the photogenerated carriers. A calculation of the absorption coefficient and refractive index at different carrier concentrations has led to a reconstruction of transmittance transients which fully agree with the experimental data at different incident intensities and temperatures. Chantal.Ferrer@uv.es ; Jaqueline.Bouvier@uv.es ; Miguel.Andres@…
Finite-size scaling of charge carrier mobility in disordered organic semiconductors
2016
Simulations of charge transport in amorphous semiconductors are often performed in microscopically sized systems. As a result, charge carrier mobilities become system-size dependent. We propose a simple method for extrapolating a macroscopic, nondispersive mobility from the system-size dependence of a microscopic one. The method is validated against a temperature-based extrapolation [A. Lukyanov and D. Andrienko, Phys. Rev. B 82, 193202 (2010)]. In addition, we provide an analytic estimate of system sizes required to perform nondispersive charge transport simulations in systems with finite charge carrier density, derived from a truncated Gaussian distribution. This estimate is not limited t…
Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.
2017
A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determini…
<title>Holographic properties of dielectric crystals and amorphous semiconductor films</title>
2001
Holographic recording properties and mechanisms are analyzed and compared in dielectric electrooptic crystals (EOC), dielectric colored alkali halide crystals (AHC) and amorphous semiconductor films (ASF) basing on author's investigations as well as on the literature data. Holographic photosensitivity parameters are introduced enabling the characterization of the recording mechanism efficiency independently of the particular optical and geometrical sample parameters, and allowing also for recording optimization. Ultimate specific recording energies for EOC, AHC and ASF are theoretically estimated. It is concluded that the ultimate recording energy for both crystalline and amorphous material…
Correlated barrier hopping in NiO films
1991
The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.
Two-Dimensional Indium Selenide for Sulphur Vapour Sensing Applications
2020
Surface-to-volume ratio in two-dimensional (2D) materials highlights among their characteristics as an inherent and intrinsic advantage taking into account their strong sensitivity to surface effects. For this reason, we have proposed in this work micromechanically exfoliated 2D nanosheets of InSe as an optical vapour sensor. As a proof of concept, we used 2-mercaptoethanol as the chemical analyte in vapour phase to monitor the change of the InSe photoluminescence (PL) before and after exposure to the analyte. For short vapour exposure times (at low analyte concentration), we found a PL enhancement of InSe nanosheets attributed to the surface localization of Se defects. For long vapour expo…
X-ray-absorption fine-structure study of ZnSexTe1−x alloys
2004
X-ray-absorption fine-structure experiments at different temperatures in ZnSexTe1−x (x=0, 0.1, 0.2, 0.55, 0.81, 0.93, 0.99, and 1.0) have been performed in order to obtain information about the structural relaxation and disorder effects occurring in the alloys. First and second neighbor distance distributions have been characterized at the Se and Zn K edges, using multiple-edge and multiple-scattering data analysis. The first neighbor distance distribution was found to be bimodal. The static disorder associated with the Zn–Te distance variance did not depend appreciably on composition. On the other hand, the static disorder associated with the Zn–Se distance increased as the Se content dimi…
Theoretical study of Zn and Cd interstitials and substitutional interstitials in CuInSe2 via hybrid functional calculations
2013
We have investigated the formation of Zn and Cd interstitials in the CuInSe2 solar cell material via density-functional-theory (DFT) calculations by employing the HSE06 hybrid functional. The computed formation energies for Zn interstitials were in the range of 2.09-2.68 e V, and in the range of 2.04-2.25 eV for substitutional interstitials. In constrast, the formation energies of Cd interstitials and substitutional interstitials were between 1.85-2.75 eV and 2.41-2.64 eV, respectively. Thus, these results indicate, that Cd interstitials are more likely to be formed than Zn interstitials, and that in case of Zn inclusion into CuInSe2 Zn atoms will prefer to adopt substitutional interstitial…